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unisonic technologies co., ltd 30n06 power mosfet www.unisonic.com.tw 1 of 8 copyright ? 2007 unisonic technologies co., ltd qw-r502-087.b 30 amps, 60 volts n-channel power mosfet ? description the utc 30n06 is a low voltage mosfet and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. this power mosf et is usually used at automotive applications in power supplies, high efficient dc to dc converters and battery operated products. ? features * r ds(on) = 40m ? @v gs = 10 v * ultra low gate charge ( typical 20 nc ) * low reverse transfer capacitance ( c rss = typical 80 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability ? symbol 1.gate 3.source 2.drain *pb-free plating product number: 30n06l ? ordering information ordering number pin assignment normal lead free plating package 1 2 3 packing 30n06-ta3-t 30n06l-ta3-t to-220 g d s tube 30n06-tf3-t 30n06l-tf3-t to-220f g d s tube note: pin assignment: g: gate d: drain s: source
30n06 power mosfet unisonic technologies co., ltd 2 of 8 www.unisonic.com.tw qw-r502-087.b ? absolute maximum ratings parameter symbol ratings unit drain-source voltage v dss 60 v gate to source voltage v gss 20 v t c = 25
30 a continuous drain current t c = 100
i d 21.3 a pulsed drain current (note 1) i dm 120 a single pulsed (note 2) e as 300 mj avalanche energy repetitive (note 1) e ar 8 mj peak diode recovery dv/dt (note 3) dv/dt 7.5 v/ns to-220 79 w power dissipation to-220f p d 45 w/
junction temperature t j +150
operation temperature t opr -55 ~ +150
storage temperature t stg -55 ~ +150
note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol rating unit to-220 62 c/w junction-to-ambient to-220f ja 62 c/w to-220 1.9 c/w junction-to-case to-220f jc 2.7 c/w ? electrical characteristics (t c = 25
, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0 v, i d = 250 a 60 v drain-source leakage current i dss v ds = 60 v, v gs = 0 v 10 a forward v gs = 20v, v ds = 0 v 100 na gate-source leakage current reverse i gss v gs = -20v, v ds = 0 v -100 na breakdown voltage temperature coefficient bv ? dss / ? t j i d =250 a, referenced to 25
0.06 v/
on characteristics gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs = 10 v, i d = 15 a 32 40 m ? dynamic characteristics input capacitance c iss 800 pf output capacitance c oss 300 pf reverse transfer capacitance c rss v gs = 0 v, v ds = 25 v, f = 1mhz 80 pf switching characteristics turn-on delay time t d(on) 12 ns turn-on rise time t r 79 ns turn-off delay time t d(off) 50 ns turn-off fall time t f v dd = 30v, i d =15 a, v gs =10v (note 4, 5) 52 ns total gate charge q g 20 30 nc gate-source charge q gs 6 nc gate-drain charge q gd v ds = 60v, v gs = 10 v, i d = 24a (note 4, 5) 9 nc
30n06 power mosfet unisonic technologies co., ltd 3 of 8 www.unisonic.com.tw qw-r502-087.b ? electrical characteristics (cont.) parameter symbol test conditions min typ max unit source-drain diode ratings and characteristics drain-source diode forward voltage v sd v gs = 0 v, i s = 30a 1.4 v maximum continuous drain-source diode forward current i s 30 a maximum pulsed drain-source diode forward current i sm 120 a reverse recovery time t rr 40 ns reverse recovery charge q rr v gs = 0 v, i s = 30a, di f / dt = 100 a/s (note4) 70 c note 1. repeativity rating: pulse wi dth limited by junction temperature 2. l=0.66mh, i as =30a, v dd =25v, r g =20 ? , starting t j =25
3. i sd 50a, di/dt 300a/s, v dd bv dss , starting t j =25
4. pulse test: pulse width 300s, duty cycle 2% 5. essentially independent of operating temperature.
30n06 power mosfet unisonic technologies co., ltd 4 of 8 www.unisonic.com.tw qw-r502-087.b ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) - + v gs = p.w. period fig. 1a peak diode recovery dv/dt test circuit fig. 1b peak diode recovery dv/dt waveforms
30n06 power mosfet unisonic technologies co., ltd 5 of 8 www.unisonic.com.tw qw-r502-087.b ? test circuits and waveforms (cont.) fig. 2a switching test circuit fig. 2b switching waveforms fig. 3a gate charge test circuit fig. 3b gate charge waveform d.u.t. r d 10v v ds l v dd t p v dd t p time bv dss i as i d(t) v ds(t) fig. 4a unclamped inductive switching test circuit fig. 4b unclamped inductive switching waveforms
30n06 power mosfet unisonic technologies co., ltd 6 of 8 www.unisonic.com.tw qw-r502-087.b ? typical characteristics 10 2 10 1 10 0 10 1 10 -1 10 0 drain-source voltage, v ds (v) drain current, i d (a) on-state characteristics 10 2 10 1 10 0 2 gate-source voltage, v gs (v) drain current, i d (a) transfer characteristics 46810 3579 v gs top: 15v 10v 8v 7v 6v 5.5v 5v bottorm: 4.5v 4.5v note: 1. v ds =25v 2. 20 s pulse test 1 5 0 2 5 drain-source on-resistance, r ds(on) (m $ ) reverse drain current, i sd (a) capacitance (pf) gate-to-source voltage, v gs (v)
30n06 power mosfet unisonic technologies co., ltd 7 of 8 www.unisonic.com.tw qw-r502-087.b ? typical characteristics(cont.) drain-source breakdown voltage, bv dss (normalized) (v) drain-source on-resistance, r ds(on) , (normalized) ( ? ) 10 1 0.1 drain-source voltage, v ds (v) drain current , i d, (a) maximum safe operating 1 100 drain current, i d (a) case temperature, t c ( ) 75 100 150 30 maximum drain current vs. case temperature 0 125 50 25 10 20 10 100 1000 dc operation in this area by r ds (on) *note: 1. t c =25 2. t j =150 3. single pulse 10ms 1ms 100 s 0.01 square wave pu lse duration, t 1 (sec) 1 1e-5 1 0.1 0.1 10 0.01 transient thermal response curve 0.02 0.1 0.2 1e-4 1e-3 0.01 *note: 1. z , jc (t) = 0.88 /w max. 2. duty factor, d=t1/t2 3. t j -t c =p dm z , jc (t) single pulse d=0.5 0.05
30n06 power mosfet unisonic technologies co., ltd 8 of 8 www.unisonic.com.tw qw-r502-087.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.

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